Model of Local Stiffness Enhancement in Porous Composite Materials with Low Dielectric Constant via Breaking of "Soft" Bonds

Abstract

Valeriy Efimovich Arkhincheev

As is known, to increase computer speed during the transition to the nanoscale, modern electronics utilize dielectrics with low dielectric constant (low-k dielectrics) [1-5]. The use of materials with low dielectric constant helps solve a number of problems: reducing RC signal delay, reducing power losses, and reducing noise. An important property of low-k materials is their porosity, which ensures the low value of the dielectric constant. However, the presence of pores, in turn, reduces the stiffness of the materials. The mechanical properties of low-k materials are crucial for their integration into semiconductor devices, as they must withstand manufacturing stresses (e.g., CMP, thermal cycling) and prevent delamination or cracking during operation.

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